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SMB1N-720-02 Datenblatt(PDF) 1 Page - Roithner LaserTechnik GmbH

Teilenummer SMB1N-720-02
Bauteilbeschribung  infrared high power led
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Hersteller  ROITHNER [Roithner LaserTechnik GmbH]
Direct Link  http://www.roithner-laser.com
Logo ROITHNER - Roithner LaserTechnik GmbH

SMB1N-720-02 Datenblatt(HTML) 1 Page - Roithner LaserTechnik GmbH

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SMB1N-720-02
v 1.0 17.03.2014
Description
SMB1N-750-02 is a surface mount AlGaAs High Power LED with a typical peak wavelength of 720 nm
and radiation of 190 mW. It comes in SMD package (PA9T) with silver plated soldering pads (lead free
solderable), copper heat sink, and molded with silicone or epoxy resin.
Maximum Ratings (T
CASE=25°C)
Parameter
Symbol
Values
Min.
Max.
Unit
Power Dissipation
PD
1700
mW
Forward Current
IF
600
mA
Pulse Forward Current *
1
IFP
2000
mA
Reverse Voltage
VF
5
V
Thermal Resistance
RTHJA
10
K/W
Junction Temperature
TJ
120
°C
Operating Temperature
TCASE
- 40
+ 100
°C
Storage Temperature
TSTG
- 40
+ 100
°C
Lead Solder Temperature *
2
TSLD
+ 250
°C
*
1 duty=1%, pulse width = 10 µs
*
2 must be completed within 5 seconds
Electro-Optical Characteristics (T
CASE=25°C)
*
1 measured by S3584-08
*
2 measured by CIE127-2007 Condition B
Parameter
Symbol Conditions
Values
Min.
Typ.
Max.
Unit
Peak Wavelength
λP
IF=600mA
710
720
730
nm
Half Width
∆λ
IF=600mA
24
nm
Forward Voltage
VF
IF=600mA
2.2
2.8
V
VFP
IFP=2A
3.7
Radiated Power *
1
PO
IF=600mA
140
190
mW
IFP=2A
630
Radiant Intensity *
2
IE
IF=600mA
380
mW/sr
IFP=2A
1200
Viewing Angle
φ
IF=100mA
20
deg.
Rise Time
tR
IF=600mA
40
ns
Fall Time
tF
IF=600mA
50
ns


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