2N3964 datasheet(1/2 Pages) CENTRAL

Teilenummer	2N3964

Bauteilbeschribung	SILICON NPN TRANSISTOR

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Hersteller	CENTRAL [Central Semiconductor Corp]

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2N3963

2N3964

SILICON

PNP TRANSISTORS

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3963 and 2N3964

are silicon PNP transistors designed for general purpose

applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C)

SYMBOL

2N3963

2N3964

UNITS

Collector-Base Voltage

VCBO

80

45

V

Collector-Emitter Voltage

VCEO

80

45

V

Emitter-Base Voltage

VEBO

6.0

V

Continuous Collector Current

IC

200

mA

Power Dissipation (TC=25°C)

PD

1.2

W

Power Dissipation

PD

360

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

Thermal Resistance

ΘJC

146

°C/W

Thermal Resistance

ΘJA

486

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

2N3963

2N3964

SYMBOL

TEST CONDITIONS

MIN

MAX

MIN

MAX

UNITS

ICBO

VCB=70V

-

10

-

nA

ICBO

VCB=40V

-

10

nA

ICES

VCE=70V

-

10

-

nA

ICES

VCE=40V

-

10

nA

IEBO

VEB=4.0V

-

10

-

10

nA

BVCBO

IC=10μA

80

-

45

-

V

BVCES

IC=10μA

80

-

45

-

V

BVCEO

IC=5.0mA

80

-

45

-

V

BVEBO

IE=10μA

6.0

-

6.0

-

V

VCE(SAT)

IC=10mA, IB=0.5mA

-

0.25

-

0.25

V

VCE(SAT)

IC=50mA, IB=5.0mA

-

0.40

-

0.40

V

VBE(SAT)

IC=10mA, IB=0.5mA

-

0.90

-

0.90

V

VBE(SAT)

IC=50mA, IB=5.0mA

-

0.95

-

0.95

V

hFE

VCE=5.0V, IC=1.0μA

60

-

180

-

hFE

VCE=5.0V, IC=10μA

100

300

250

500

hFE

VCE=5.0V, IC=10μA, TA=-55°C

40

-

100

-

hFE

VCE=5.0V, IC=100μA

100

-

250

-

hFE

VCE=5.0V, IC=1.0mA

100

450

250

600

hFE

VCE=5.0V, IC=1.0mA, TA=100°C

-

600

-

800

hFE

VCE=5.0V, IC=10mA

100

-

200

-

hFE

VCE=5.0V, IC=50mA

90

-

180

-

hFE

VCE=5.0V, IC=50mA, TA=-55°C

45

-

90

-

TO-18 CASE

R0 (17-May 2013)

www.centr a lsemi.com

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