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AM55-0016SMB Datenblatt(PDF) 1 Page - Tyco Electronics

Teilenummer AM55-0016SMB
Bauteilbeschribung  Switched Low Noise Amplifier 800 - 1000 MHz
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Hersteller  MACOM [Tyco Electronics]
Direct Link  http://www.macom.com
Logo MACOM - Tyco Electronics

AM55-0016SMB Datenblatt(HTML) 1 Page - Tyco Electronics

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V2.00
Switched Low Noise Amplifier, 800-1000 MHz
AM55-0016
M/A-COM Division of AMP Incorporated s North America: Tel. (800) 366-2266, Fax (800) 618-8883 s Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
s Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
Specifications subject to change without notice.
* If specific reel size is required, consult factory for part number.
Ordering Information
Part Number
Package
AM55-0016
MSOP 8-Lead Plastic Package
AM55-0016TR
Forward Tape and Reel*
AM55-0016RTR
Reverse Tape and Reel*
AM55-0016SMB
Designer’s Kit
MSOP-8
Features
High Gain State:
- Gain: 16dB, Noise Figure: 1.6dB
- Input IP3: +3dBm (@2.7V, 25mA)
Low Gain State:
- Insertion Loss: 5dB, Input IP3: +24dBm
Single Supply: +2.7 to +5 VDC
Low Cost MSOP-8 Plastic Package
Adjustable current: 10 to 30 mA with external resistor
Description
M/A-COM’s AM55-0016 is a high dynamic range, switchable
low noise amplifier in a low cost, MSOP 8-lead, surface mount,
plastic package. The design utilizes a patented switching
technique to provide a low insertion loss, high input IP
3 bypass
state in parallel with the high gain, low noise state. The LNA
employs external input matching to obtain optimum noise figure
performance
and
operating
frequency
flexibility.
The
AM55-0016 also features flexible biasing to control the current
consumption vs. dynamic range trade-off. Its current can be
controlled over a range of 10 mA to 30 mA with an external
resistor.
Typical applications include receiver front ends in cellular band
CDMA handsets. It is also useful as a switched gain block, buffer
or driver in portable cellular systems.
The AM55-0016 is fabricated using a low-cost 0.5-micron gate
length GaAs MESFET process. The process features full
passivation for increased performance and reliability.
Switched Low Noise Amplifier
800 - 1000 MHz
AM55-0016
-B-
ID PIN
0.193
010
R
0 118
.020
020
0.0256
0 118
12°
4X
0 034
0 040
0 008
0 013
12°
4X
0.007
0 0215
RF
IN
RF
OUT
Functional Block Diagram
Electrical Specifications
1
T
A = +25°C, Z0=50Ω, F=881 MHz, PIN= -30 dBm, VDD=2.7 V, IDD=10 mA
Parameter
Test Conditions
Units
Min.
Typ.
Max.
HIGH GAIN STATE, Voltage control = 2.7 volts
Gain
dB
16
Noise Figure
dB
1.6
1.8
Input IP3
I
DD = 10 mA, VDD = 2.7V
I
DD = 25 mA, VDD = 2.7V
dBm
dBm
-2
+3
Input VSWR / Output VSWR
2.0:1
Reverse Isolation
dB
32
LOW GAIN STATE, Voltage control = 0 volts
Insertion Loss
I
DD = 100 µA
dB
5
Input IP3
dBm
+24
Input VSWR
2.3:1
Output VSWR
2.0:1
1. Refer to
Typical Performance Data for performance versus frequency and bias.


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