Datenblatt-Suchmaschine für elektronische Bauteile |
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KF4N65FM Datenblatt(PDF) 2 Page - KEC(Korea Electronics) |
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KF4N65FM Datenblatt(HTML) 2 Page - KEC(Korea Electronics) |
2 / 6 page 2013. 5. 02 2/6 KF4N65FM Revision No : 0 ELECTRICAL CHARACTERISTICS (Tc=25 ℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250μ A, VGS=0V 650 - - V Breakdown Voltage Temperature Coefficient ΔBV DSS/ΔTj ID=250μ A, Referenced to 25 ℃ - 0.65 - V/ ℃ Drain Cut-off Current IDSS VDS=650V, VGS=0V, - - 10 ㎂ Gate Threshold Voltage Vth VDS=VGS, ID=250μ A 2.5 - 4.5 V Gate Leakage Current IGSS VGS=±30V, VDS=0V - - ±100 nA Drain-Source ON Resistance RDS(ON) VGS=10V, ID=1.8A - 2.1 2.5 Ω Dynamic Total Gate Charge Qg VDS=520V, ID=3.6A VGS=10V (Note4,5) - 15 - nC Gate-Source Charge Qgs - 4.1 - Gate-Drain Charge Qgd - 6.0 - Turn-on Delay time td(on) VDD=325V ID=3.6A RG=25Ω (Note4,5) - 25 - ns Turn-on Rise time tr - 15 - Turn-off Delay time td(off) - 45 - Turn-off Fall time tf - 15 - Input Capacitance Ciss VDS=25V, VGS=0V, f=1.0MHz - 510 - pF Output Capacitance Coss - 60 - Reverse Transfer Capacitance Crss - 6.5 - Source-Drain Diode Ratings Continuous Source Current IS VGS<Vth - - 3.6 A Pulsed Source Current ISP - - 14.4 Diode Forward Voltage VSD IS=3.6A, VGS=0V - - 1.4 V Reverse Recovery Time trr IS=3.6A, VGS=0V, dIs/dt=100A/ ㎲ - 350 - ns Reverse Recovery Charge Qrr - 2.1 - μC Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 2) L =15mH, IS=3.6A, VDD=50V, RG=25Ω, Starting Tj=25℃. Note 3) IS≤7.0A, dI/dt≤200A/㎲, VDD≤BVDSS, Starting Tj=25℃. Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle ≤ 2%. Note 5) Essentially independent of operating temperature. 2 PRODUCT NAME LOT NO 1 713 2 KF4N65 FM 1 Marking |
Ähnliche Teilenummer - KF4N65FM_15 |
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Ähnliche Beschreibung - KF4N65FM_15 |
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