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SEMICONDUCTOR

TECHNICAL DATA

KF5N60D/I

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, fast reverse recovery time, low on resistance, low gate

charge and excellent avalanche characteristics. It is mainly suitable for

electronic ballast and switching mode power supplies.

FEATURES

・V

・Drain-Source ON Resistance : R

・Qg(typ) = 11nC

MAXIMUM RATING (Tc=25

℃)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Drain Current

3.5

A

2.2

Pulsed (Note1)

13

Single Pulsed Avalanche Energy

(Note 2)

140

mJ

Repetitive Avalanche Energy

(Note 1)

3.5

mJ

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

4.5

V/ns

Drain Power

Dissipation

Tc=25

℃

59.5

W

Derate above 25

℃

0.48

W/

℃

Maximum Junction Temperature

150

℃

Storage Temperature Range

-55

～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

2.1

℃/W

Thermal Resistance, Junction-to-

Ambient

110

℃/W

G

D

S

PIN CONNECTION

DPAK (1)

DIM MILLIMETERS

A

A

B

B

C

C

D

D

F

FF

H

G

K

G

J

L

K

L

M

0.96 MAX

0.90 MAX

E

E

M

N

H

0.70 MIN

O

0.1 MAX

N

12

3

6.60

0.20

+

_

6.10 0.20

+

_

5.34

0.30

+

_

0.70 0.20

+

_

2.70

0.15

+

_

2.30 0.10

+

_

1.80 0.20

+

_

0.50

0.10

+

_

2.30 0.10

+

_

0.50 0.10

+

_

J

O

1. GATE

2. DRAIN

3. SOURCE

IPAK(1)

123

A

A

B

C

C

D

E

F

FF

G

G

H

H

J

J

L

L

0.96 MAX

K

M

P

M

N

P

N

6.6 0.2

+

_

6.1 0.2

+

_

5.34 0.3

+

_

0.7 0.2

+

_

9.3 0.3

+

_

2.3 0.2

+

_

0.76 0.1

+

_

2.3 0.1

+

_

0.5 0.1

+

_

1.8

0.2

+

_

0.5

0.1

+

_

1.0

0.1

+

_

+

_

1.02

0.3

DIM

MILLIMETERS

1. GATE

2. DRAIN

3. SOURCE

KF5N60D

KF5N60I