KTA1270 datasheet(1/2 Pages) KEC

Teilenummer	KTA1270

Bauteilbeschribung	EPITAXIAL PLANAR PNP TRANSISTOR

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Hersteller	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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2012. 6. 8

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SEMICONDUCTOR

TECHNICAL DATA

KTA1270

EPITAXIAL PLANAR PNP TRANSISTOR

Revision No : 2

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

・Excellent h

FE Linearity

: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA.

・Complementary to KTC3202.

MAXIMUM RATING (Ta=25

℃)

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

Note : hFE(1) Classification

0:70

～140,

Y:120

～240

hFE(2) Classification

0:25Min.,

Y:40Min.

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=-35V, IE=0

-

-0.1

μA

Emitter Cut-off Current

IEBO

VEB=-5V, IC=0

-

-0.1

μA

DC Current Gain

hFE(1) (Note)

VCE=-1V, IC=-100mA

70

-

240

hFE(2) (Note)

VCE=-6V, IC=-400mA

25

-

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-100mA, IB=-10mA

-

-0.1

-0.25

V

Base-Emitter Voltage

VBE

VCE=-1V, IC=-100mA

-

-0.8

-1.0

V

Transition Frequency

fT

VCE=-6V, IC=-20mA

-

200

-

MHz

Collector Output Capacitance

Cob

VCB=-6V, IE=0, f=1MHz

-

13

-

pF

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-35

V

Collector-Emitter Voltage

VCEO

-30

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-500

mA

Base Current

IB

-100

mA

Collector Power Dissipation

PC

625

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

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