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IRF40H210 Datenblatt(PDF) 3 Page - International Rectifier

Teilenummer IRF40H210
Bauteilbeschribung  Brushed Motor drive applications
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF40H210 Datenblatt(HTML) 3 Page - International Rectifier

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IRF40H210
3
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© 2015 International Rectifier
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April 1, 2015
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max. Units
Conditions
gfs
Forward Transconductance
113
–––
–––
S VDS = 10V, ID = 100A
Qg
Total Gate Charge
–––
101
152
ID = 100A
Qgs
Gate-to-Source Charge
–––
30
–––
VDS = 20V
Qgd
Gate-to-Drain Charge
–––
31
–––
VGS = 10V
Qsync
Total Gate Charge Sync. (Qg – Qgd)
–––
70
–––
td(on)
Turn-On Delay Time
–––
9.2
–––
ns
VDD = 20V
tr
Rise Time
–––
25
–––
ID = 30A
td(off)
Turn-Off Delay Time
–––
65
–––
RG= 2.7
tf
Fall Time
–––
34
–––
VGS = 10V 
Ciss
Input Capacitance
–––
5406
–––
pF  
VGS = 0V
Coss
Output Capacitance
–––
805
–––
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
518
–––
ƒ = 1.0MHz, See Fig.7
Coss eff.(ER)
Effective Output Capacitance
(Energy Related)
–––
962
–––
VGS = 0V, VDS = 0V to 32V
Coss eff.(TR)
Output Capacitance (Time Related)
–––
1179
–––
VGS = 0V, VDS = 0V to 32V
Diode Characteristics  
Symbol
Parameter
Min.
Typ.
Max. Units
Conditions
IS
Continuous Source Current
–––
–––
100
A
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
–––
–––
400*
integral reverse
(Body Diode)
p-n junction diode.
VSD
Diode Forward Voltage
–––
0.8
1.2
V TJ = 25°C,IS = 100A,VGS = 0V 
dv/dt
Peak Diode Recovery dv/dt
–––
6.2
–––
V/ns TJ = 150°C,IS = 100A,VDS = 40V
trr
Reverse Recovery Time
–––
21
–––
ns
TJ = 25°C
–––
22
–––
TJ = 125°C
Qrr
Reverse Recovery Charge
–––
32
–––
nC
TJ = 25°C

–––
38
–––
TJ = 125°C
 
IRRM
Reverse Recovery Current
–––
1.0
–––
A TJ = 25°C
nC  
D
S
G
VR = 34V,
IF = 100A
di/dt = 100A/µs


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