KTB764_15 datasheet(1/3 Pages) KEC

Teilenummer	KTB764

Bauteilbeschribung	TRIPLE DIFFUSED PNP TRANSISTOR

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Hersteller	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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2012. 5. 4

1/3

SEMICONDUCTOR

TECHNICAL DATA

KTB764

TRIPLE DIFFUSED PNP TRANSISTOR

Revision No : 3

VOLTAGE REGULATOR, RELAY,

LAMP DRIVER, INDUSTRIAL USE

FEATURES

・High Voltage : V

CEO=-50V(Min.).

・High Current : I

C(Max.)=-1A.

・High Transition Frequency : f

T=150MHz(Typ.).

・Wide Area of Safe Operation.

・Complementary to KTD863.

MAXIMUM RATING (Ta=25

℃)

DIM

MILLIMETERS

A

B

D

E

G

H

K

L

1. EMITTER

2. COLLECTOR

3. BASE

P

TO-92L

7.20 MAX

5.20 MAX

2.50 MAX

0.60 MAX

1.27

1.70 MAX

0.55 MAX

14.00 0.50

0.35 MIN

0.75 0.10

4

F

J

M

O

Q

25

1.25

Φ1.50

0.10 MAX

DEPTH:0.2

123

B

C

Q

K

FF

M

N

H

L

D

C

N

P

HH

E

H

S

12.50 0.50

R

1.00

S

1.15 MAX

+

_

+

_

+

_

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

CHARACTERISTIC

SYMBOL

RATING

UNIT

Collector-Base Voltage

VCBO

-60

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

DC

IC

-1

A

Pulse

ICP

-2

Collector Power Dissipation

PC

1

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

ICBO

VCB=-50V, IE=0

-

-1

μA

Collector Cut-off Current

ICEO

VCE=-50V, IB=0

-

-1

μA

Emitter Cut-off Current

IEBO

VEB=-4V, IC=0

-

-1

μA

DC Current Gain

hFE(1)

VCE=-2V, IC=-50mA

60

-

320

hFE(2)

VCE=-2V, IC=-1A

30

-

Collector-Emitter Breakdown Voltage

V(BR)CEO

IC=-1mA, IB=0

-50

-

V

Collector-Emitter Saturation Voltage

VCE(sat)

IC=-500mA, IB=-50mA

-

-0.2

-0.7

V

Base-Emitter Saturation Voltage

VBE(sat)

IC=-500mA, IB=-50mA

-

-0.85

-1.2

V

Transition Frequency

fT

VCE=-10V, IC=-50mA

-

150

-

MHz

Collector Output Capacitance

Cob

VCB=-10V, IE=0, f=1MHz

-

20

-

pF

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