Datenblatt-Suchmaschine für elektronische Bauteile |
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2N2906U Datenblatt(PDF) 1 Page - KEC(Korea Electronics) |
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2N2906U Datenblatt(HTML) 1 Page - KEC(Korea Electronics) |
1 / 4 page 2008. 9. 23 1/4 SEMICONDUCTOR TECHNICAL DATA 2N2906U EPITAXIAL PLANAR PNP TRANSISTOR Revision No : 1 GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA(Max.), IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. ・Low Collector Output Capacitance : Cob=4.5pF(Max.) @VCB=5V. MAXIMUM RATING (Ta=25 ℃) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Base Current IB -50 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ~150 ℃ * Total Rating EQUIVALENT CIRCUIT (TOP VIEW) Marking |
Ähnliche Teilenummer - 2N2906U_15 |
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Ähnliche Beschreibung - 2N2906U_15 |
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