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2N3773 Datenblatt(PDF) 2 Page - ON Semiconductor

Teilenummer 2N3773
Bauteilbeschribung  NPN Power Transistors 16 A NPN POWER TRANSISTORS 140 V, 150 W
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS (Note 3)
Collector−Emitter Breakdown Voltage (Note 4)
(IC = 0.2 Adc, IB = 0)
VCEO(sus)
140
Vdc
Collector−Emitter Sustaining Voltage (Note 4)
(IC = 0.1 Adc, VBE(off) = 1.5 Vdc, RBE = 100 Ohms)
VCEX(sus)
160
Vdc
Collector−Emitter Sustaining Voltage
(IC = 0.2 Adc, RBE = 100 Ohms)
VCER(sus)
150
Vdc
Collector Cutoff Current (Note 4)
(VCE = 120 Vdc, IB = 0)
ICEO
10
mAdc
Collector Cutoff Current (Note 4)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
2
10
mAdc
Collector Cutoff Current
(VCB = 140 Vdc, IE = 0)
ICBO
2
mAdc
Emitter Cutoff Current (Note 4)
(VBE = 7 Vdc, IC = 0)
IEBO
5
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 8 Adc, VCE = 4 Vdc) (Note 4)
(IC = 16 Adc, VCE = 4 Vdc)
hFE
15
5
60
Collector−Emitter Saturation Voltage
(IC = 8 Adc, IB = 800 mAdc) (Note 4)
(IC = 16 Adc, IB = 3.2 Adc)
VCE(sat)
1.4
4
Vdc
Base−Emitter On Voltage (Note 4)
(IC = 8 Adc, VCE = 4 Vdc)
VBE(on)
2.2
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common−Emitter
Small−Signal, Short−Circuit, Forward Current Transfer Ratio
(IC = 1 A, f = 50 kHz)
|hfe|
4
Small−Signal Current Gain (Note 4)
(IC = 1 Adc, VCE = 4 Vdc, f = 1 kHz)
hfe
40
SECOND BREAKDOWN CHARACTERISTICS
Second Breakdown Collector Current with Base Forward Biased
t = 1 s (non−repetitive), VCE = 100 V, See Figure 12
IS/b
1.5
Adc
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
4. Indicates JEDEC Registered Data.
ORDERING INFORMATION
Device
Package
Shipping
2N3773G
TO−204
(Pb−Free)
100 Unit / Tray
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.


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