Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF7342D2PBF Datenblatt(PDF) 4 Page - International Rectifier |
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IRF7342D2PBF Datenblatt(HTML) 4 Page - International Rectifier |
4 / 11 page IRF7342D2PbF 4 www.irf.com Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage - Fig 7. Typical Source-Drain Diode Forward Voltage Power Mosfet Characteristics 1 10 100 0 200 400 600 800 1000 -V , Drain-to-Source Voltage (V) DS V C C C = = = = 0V, C C C f = 1MHz + C + C C SHORTED GS iss gs gd , ds rss gd oss ds gd Ciss Coss Crss 0 10 20 30 40 0 4 8 12 16 20 Q , Total Gate Charge (nC) G I = D -3.1A V =-12V DS V =-30V DS V =-48V DS 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 25 C J ° T = 150 C J ° 0.1 1 10 100 1 10 100 OPERATION IN THIS AREA LIMITED BY RDS(on) Single Pulse T T = 150 C = 25 C ° ° J C -V , Drain-to-Source Voltage (V) DS 10us 100us 1ms 10ms |
Ähnliche Teilenummer - IRF7342D2PBF_15 |
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Ähnliche Beschreibung - IRF7342D2PBF_15 |
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