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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF7425PBF Datenblatt(PDF) 2 Page - International Rectifier |
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IRF7425PBF Datenblatt(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF7425PbF 2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback October 29, 201 3 Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– -1.2 V TJ = 25°C, IS = -2.5A, VGS = 0V trr Reverse Recovery Time ––– 120 180 ns TJ = 25°C, IF = -2.5A Qrr Reverse Recovery Charge ––– 160 240 nC di/dt = -100A/μs Source-Drain Ratings and Characteristics A -60 ––– ––– ––– -2.5 ––– S D G Repetitive rating; pulse width limited by max. junction temperature. Notes: Pulse width ≤ 400μs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage -20 ––– ––– V VGS = 0V, ID = -250μA ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.010 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 8.2 VGS = -4.5V, ID = -15A ––– ––– 13 VGS = -2.5V, ID = -13A VGS(th) Gate Threshold Voltage -0.45 ––– -1.2 V VDS = VGS, ID = -250μA gfs Forward Transconductance 44 ––– ––– S VDS = -10V, ID = -15A ––– ––– -1.0 VDS = -16V, VGS = 0V ––– ––– -25 VDS = -16V, VGS = 0V, TJ = 70°C Gate-to-Source Forward Leakage ––– ––– -100 VGS = -12V Gate-to-Source Reverse Leakage ––– ––– 100 VGS = 12V Qg Total Gate Charge ––– 87 130 ID = -15A Qgs Gate-to-Source Charge ––– 18 27 nC VDS = -10V Qgd Gate-to-Drain ("Miller") Charge ––– 21 32 VGS = -4.5V td(on) Turn-On Delay Time ––– 13 ––– VDD = -10V tr Rise Time ––– 20 ––– ID = -1.0A td(off) Turn-Off Delay Time ––– 230 ––– RG = 6.0 Ω tf Fall Time ––– 160 ––– VGS = -4.5V Ciss Input Capacitance ––– 7980 ––– VGS = 0V Coss Output Capacitance ––– 1480 ––– pF VDS = -15V Crss Reverse Transfer Capacitance ––– 980 ––– ƒ = 1.0kHz Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA m Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns Surface mounted on 1 in square Cu board, t ≤ 10sec. |
Ähnliche Teilenummer - IRF7425PBF_15 |
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Ähnliche Beschreibung - IRF7425PBF_15 |
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