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IRF7457PBF Datenblatt(PDF) 2 Page - International Rectifier

Teilenummer IRF7457PBF
Bauteilbeschribung  High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7457PBF Datenblatt(HTML) 2 Page - International Rectifier

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IRF7457PbF
2
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Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
30
––– –––
S
VDS = 16V, ID = 12A
Qg
Total Gate Charge
–––
28
42
ID = 12A
Qgs
Gate-to-Source Charge
–––
11
17
nC
VDS = 10V
Qgd
Gate-to-Drain ("Miller") Charge
–––
10
15
VGS = 4.5V,
ƒ
Qoss
Output Gate Charge
–––
25
38
VGS = 0V, VDS = 10V
td(on)
Turn-On Delay Time
–––
14
–––
VDD = 10V,
tr
Rise Time
–––
16
–––
ID = 12A
td(off)
Turn-Off Delay Time
–––
16
–––
RG = 1.8Ω
tf
Fall Time
–––
7.5
–––
VGS = 4.5V
ƒ
Ciss
Input Capacitance
–––
3100 –––
VGS = 0V
Coss
Output Capacitance
–––
1600 –––
VDS = 10V
Crss
Reverse Transfer Capacitance
–––
270 –––
pF
ƒ = 1.0MHz
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
––– –––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

––– –––
p-n junction diode.
–––
0.8
1.3
V
TJ = 25°C, IS = 12A, VGS = 0V
ƒ
––– 0.67 –––
TJ = 125°C, IS = 12A, VGS = 0V
trr
Reverse Recovery Time
–––
50
75
ns
TJ = 25°C, IF = 12A, VR= 15V
Qrr
Reverse Recovery Charge
–––
70
105
nC
di/dt = 100A/µs
ƒ
trr
Reverse Recovery Time
–––
50
75
ns
TJ = 125°C, IF = 12A, VR=15V
Qrr
Reverse Recovery Charge
–––
74
110
nC
di/dt = 100A/µs
ƒ
Parameter
Typ.
Max.
Units
EAS
Single Pulse Avalanche Energy
‚
–––
265
mJ
IAR
Avalanche Current

–––
15
A
Avalanche Characteristics
S
D
G
Diode Characteristics
2.5
120
A
VSD
Diode Forward Voltage
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.023 –––
V/°C Reference to 25°C, ID = 1mA
–––
5.5
7.0
VGS = 10V, ID = 15A
ƒ
–––
8.0
10.5
VGS = 4.5V, ID = 12A
ƒ
VGS(th)
Gate Threshold Voltage
1.0
–––
3.0
V
VDS = VGS, ID = 250µA
–––
–––
20
µA
VDS = 16V, VGS = 0V
–––
–––
100
VDS = 16V, VGS = 0V, TJ = 125°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 16V
Gate-to-Source Reverse Leakage
–––
––– -200
nA
VGS = -16V
Static @ TJ = 25°C (unless otherwise specified)
IGSS
IDSS
Drain-to-Source Leakage Current
RDS(on)
Static Drain-to-Source On-Resistance
m


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