Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF7457PBF Datenblatt(PDF) 2 Page - International Rectifier |
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IRF7457PBF Datenblatt(HTML) 2 Page - International Rectifier |
2 / 8 page IRF7457PbF 2 www.irf.com Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 30 ––– ––– S VDS = 16V, ID = 12A Qg Total Gate Charge ––– 28 42 ID = 12A Qgs Gate-to-Source Charge ––– 11 17 nC VDS = 10V Qgd Gate-to-Drain ("Miller") Charge ––– 10 15 VGS = 4.5V, Qoss Output Gate Charge ––– 25 38 VGS = 0V, VDS = 10V td(on) Turn-On Delay Time ––– 14 ––– VDD = 10V, tr Rise Time ––– 16 ––– ID = 12A td(off) Turn-Off Delay Time ––– 16 ––– RG = 1.8Ω tf Fall Time ––– 7.5 ––– VGS = 4.5V Ciss Input Capacitance ––– 3100 ––– VGS = 0V Coss Output Capacitance ––– 1600 ––– VDS = 10V Crss Reverse Transfer Capacitance ––– 270 ––– pF ƒ = 1.0MHz Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. ––– 0.8 1.3 V TJ = 25°C, IS = 12A, VGS = 0V ––– 0.67 ––– TJ = 125°C, IS = 12A, VGS = 0V trr Reverse Recovery Time ––– 50 75 ns TJ = 25°C, IF = 12A, VR= 15V Qrr Reverse Recovery Charge ––– 70 105 nC di/dt = 100A/µs trr Reverse Recovery Time ––– 50 75 ns TJ = 125°C, IF = 12A, VR=15V Qrr Reverse Recovery Charge ––– 74 110 nC di/dt = 100A/µs Parameter Typ. Max. Units EAS Single Pulse Avalanche Energy ––– 265 mJ IAR Avalanche Current ––– 15 A Avalanche Characteristics S D G Diode Characteristics 2.5 120 A VSD Diode Forward Voltage Dynamic @ TJ = 25°C (unless otherwise specified) ns Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.023 ––– V/°C Reference to 25°C, ID = 1mA ––– 5.5 7.0 VGS = 10V, ID = 15A ––– 8.0 10.5 VGS = 4.5V, ID = 12A VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V VDS = VGS, ID = 250µA ––– ––– 20 µA VDS = 16V, VGS = 0V ––– ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C Gate-to-Source Forward Leakage ––– ––– 200 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -200 nA VGS = -16V Static @ TJ = 25°C (unless otherwise specified) IGSS IDSS Drain-to-Source Leakage Current RDS(on) Static Drain-to-Source On-Resistance m Ω |
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