Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF7530PBF Datenblatt(PDF) 1 Page - International Rectifier |
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IRF7530PBF Datenblatt(HTML) 1 Page - International Rectifier |
1 / 8 page Parameter Max. Units VDS Drain- Source Voltage 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 5.4 ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 4.3 A IDM Pulsed Drain Current 40 PD @TA = 25°C Power Dissipation 1.3 PD @TA = 70°C Power Dissipation 0.80 Linear Derating Factor 10 mW/°C EAS Single Pulse Avalanche Energy 33 mJ VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C 5/13/04 HEXFET® Power MOSFET Parameter Max. Units RθJA Maximum Junction-to-Ambient 100 °C/W Thermal Resistance VDSS = 20V RDS(on) = 0.030Ω Description Absolute Maximum Ratings W www.irf.com 1 IRF7530PbF l Trench Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) l Available in Tape & Reel l Lead-Free New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The new Micro8 ™ package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal device for applicationswhereprintedcircuitboardspaceisatapremium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Micro8 ™ D1 D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 PD - 95243 |
Ähnliche Teilenummer - IRF7530PBF_15 |
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Ähnliche Beschreibung - IRF7530PBF_15 |
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