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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF7779L2PBF Datenblatt(PDF) 2 Page - International Rectifier |
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IRF7779L2PBF Datenblatt(HTML) 2 Page - International Rectifier |
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2 / 11 page  2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback May 6, 2014 IRF7779L2PbF Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 150 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.13 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 9.0 11 mΩ VGS(th) Gate Threshold Voltage 3.0 4.0 5.0 V ΔVGS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -15 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 83 ––– ––– S Qg Total Gate Charge ––– 97 150 Qgs1 Pre-Vth Gate-to-Source Charge ––– 27 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 6.9 ––– nC Qgd Gate-to-Drain Charge ––– 33 50 Qgodr Gate Charge Overdrive ––– 30 ––– See Fig. 9 Qsw Switch Charge (Qgs2 + Qgd) ––– 40 ––– Qoss Output Charge ––– 39 ––– nC RG Gate Resistance ––– 1.5 ––– Ω td(on) Turn-On Delay Time ––– 16 ––– tr Rise Time ––– 19 ––– td(off) Turn-Off Delay Time ––– 36 ––– ns tf Fall Time ––– 12 ––– Ciss Input Capacitance ––– 6660 ––– Coss Output Capacitance ––– 840 ––– pF Crss Reverse Transfer Capacitance ––– 180 ––– Coss Output Capacitance ––– 5620 ––– Coss Output Capacitance ––– 400 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 67 (Body Diode) A ISM Pulsed Source Current ––– ––– 270 (Body Diode) Ãg VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 110 170 ns Qrr Reverse Recovery Charge ––– 510 770 nC ID = 40A VDS = 120V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 10V VDS = 50V, ID = 40A VDS = 75V TJ = 25°C, IF = 40A, VDD = 75V di/dt = 100A/μs i TJ = 25°C, IS = 40A, VGS = 0V i showing the integral reverse p-n junction diode. VDS = VGS, ID = 250μA VDS = 150V, VGS = 0V Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 2mA VGS = 10V, ID = 40A i VDS = 16V, VGS = 0V VDD = 75V, VGS = 10VÃi VGS = 0V ƒ = 1.0MHz ID = 40A MOSFET symbol RG=1.8Ω VDS = 25V Conditions VGS = 0V, VDS = 120V, f=1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz |
Ähnliche Teilenummer - IRF7779L2PBF_15 |
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Ähnliche Beschreibung - IRF7779L2PBF_15 |
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