Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF8252PBF Datenblatt(PDF) 2 Page - International Rectifier |
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IRF8252PBF Datenblatt(HTML) 2 Page - International Rectifier |
2 / 9 page IRF8252PbF 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 25 ––– ––– V ∆ΒVDSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.018 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 2.0 2.7 ––– 2.9 3.7 VGS(th) Gate Threshold Voltage 1.35 1.80 2.35 V ∆VGS(th) Gate Threshold Voltage Coefficient ––– -6.67 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 89 ––– ––– S Qg Total Gate Charge ––– 35 53 Qgs1 Pre-Vth Gate-to-Source Charge ––– 10 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 4.6 ––– Qgd Gate-to-Drain Charge ––– 12 ––– Qgodr Gate Charge Overdrive ––– 8.9 ––– See Figs. 15 & 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 16 ––– Qoss Output Charge ––– 26 ––– nC Rg Gate Resistance ––– 0.61 1.22 Ω td(on) Turn-On Delay Time ––– 23 ––– tr Rise Time ––– 32 ––– td(off) Turn-Off Delay Time ––– 19 ––– tf Fall Time ––– 12 ––– Ciss Input Capacitance ––– 5305 ––– Coss Output Capacitance ––– 1340 ––– Crss Reverse Transfer Capacitance ––– 725 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– (Body Diode) ISM Pulsed Source Current ––– ––– (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 19 29 ns Qrr Reverse Recovery Charge ––– 12 18 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) m Ω A 3.1 200 A ––– ID = 20A VGS = 0V VDS = 13V nC ns pF VGS = 4.5V, ID = 20A e VGS = 4.5V Typ. ––– VDS = VGS, ID = 100µA RG = 1.8Ω VDS = 13V, ID = 20A VDS = 20V, VGS = 0V, TJ = 125°C µA nA TJ = 25°C, IF = 20A, VDD = 13V di/dt = 230A/µs e TJ = 25°C, IS = 20A, VGS = 0V e showing the integral reverse p-n junction diode. MOSFET symbol VDS = VGS, ID = 100µA VDS = 16V, VGS = 0V VDD = 13V, VGS = 4.5V ID = 20A VDS = 13V VGS = 20V VGS = -20V VDS = 20V, VGS = 0V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 25A e Conditions See Fig. 18 Max. 231 20 ƒ = 1.0MHz |
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