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IRF8252PBF Datenblatt(PDF) 2 Page - International Rectifier

Teilenummer IRF8252PBF
Bauteilbeschribung  Synchronous MOSFET for Notebook Processor Power
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF8252PBF Datenblatt(HTML) 2 Page - International Rectifier

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IRF8252PbF
2
www.irf.com
S
D
G
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
25
–––
–––
V
∆ΒVDSS/∆TJ
Breakdown Voltage Temp. Coefficient
–––
0.018
–––
V/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
2.0
2.7
–––
2.9
3.7
VGS(th)
Gate Threshold Voltage
1.35
1.80
2.35
V
∆VGS(th)
Gate Threshold Voltage Coefficient
–––
-6.67
––– mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
89
–––
–––
S
Qg
Total Gate Charge
–––
35
53
Qgs1
Pre-Vth Gate-to-Source Charge
–––
10
–––
Qgs2
Post-Vth Gate-to-Source Charge
–––
4.6
–––
Qgd
Gate-to-Drain Charge
–––
12
–––
Qgodr
Gate Charge Overdrive
–––
8.9
–––
See Figs. 15 & 16
Qsw
Switch Charge (Qgs2 + Qgd)
–––
16
–––
Qoss
Output Charge
–––
26
–––
nC
Rg
Gate Resistance
–––
0.61
1.22
td(on)
Turn-On Delay Time
–––
23
–––
tr
Rise Time
–––
32
–––
td(off)
Turn-Off Delay Time
–––
19
–––
tf
Fall Time
–––
12
–––
Ciss
Input Capacitance
–––
5305
–––
Coss
Output Capacitance
–––
1340
–––
Crss
Reverse Transfer Capacitance
–––
725
–––
Avalanche Characteristics
Parameter
Units
EAS
Single Pulse Avalanche Energy
d
mJ
IAR
Avalanche Current
™
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
(Body Diode)
ISM
Pulsed Source Current
–––
–––
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.0
V
trr
Reverse Recovery Time
–––
19
29
ns
Qrr
Reverse Recovery Charge
–––
12
18
nC
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
m
A
3.1
200
A
–––
ID = 20A
VGS = 0V
VDS = 13V
nC
ns
pF
VGS = 4.5V, ID = 20A
e
VGS = 4.5V
Typ.
–––
VDS = VGS, ID = 100µA
RG = 1.8Ω
VDS = 13V, ID = 20A
VDS = 20V, VGS = 0V, TJ = 125°C
µA
nA
TJ = 25°C, IF = 20A, VDD = 13V
di/dt = 230A/µs
e
TJ = 25°C, IS = 20A, VGS = 0V e
showing the
integral reverse
p-n junction diode.
MOSFET symbol
VDS = VGS, ID = 100µA
VDS = 16V, VGS = 0V
VDD = 13V, VGS = 4.5V
ID = 20A
VDS = 13V
VGS = 20V
VGS = -20V
VDS = 20V, VGS = 0V
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 25A e
Conditions
See Fig. 18
Max.
231
20
ƒ = 1.0MHz


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