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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF8788PBF Datenblatt(PDF) 2 Page - International Rectifier |
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IRF8788PBF Datenblatt(HTML) 2 Page - International Rectifier |
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2 / 9 page  IRF8788PbF 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.024 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 2.3 2.8 ––– 3.04 3.8 VGS(th) Gate Threshold Voltage 1.35 1.80 2.35 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -6.59 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 95 ––– ––– S Qg Total Gate Charge ––– 44 66 Qgs1 Pre-Vth Gate-to-Source Charge ––– 12 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 4.7 ––– Qgd Gate-to-Drain Charge ––– 14 ––– Qgodr Gate Charge Overdrive ––– 13.3 ––– See Figs. 17a & 17b Qsw Switch Charge (Qgs2 + Qgd) ––– 18.7 ––– Qoss Output Charge ––– 22 ––– nC Rg Gate Resistance ––– 0.54 1.09 Ω td(on) Turn-On Delay Time ––– 23 ––– tr Rise Time ––– 24 ––– td(off) Turn-Off Delay Time ––– 23 ––– tf Fall Time ––– 11 ––– Ciss Input Capacitance ––– 5720 ––– Coss Output Capacitance ––– 980 ––– Crss Reverse Transfer Capacitance ––– 450 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current A Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– (Body Diode) ISM Pulsed Source Current ––– ––– (Body Diode) Ã VSD Diode Forward Voltage ––– ––– 1.0 V ––– ––– 0.75 V trr Reverse Recovery Time ––– 24 36 ns Qrr Reverse Recovery Charge ––– 33 50 nC ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) m Ω A 3.1 190 A ––– ID = 19A VGS = 0V VDS = 15V nC ns pF VGS = 4.5V, ID = 19A e VGS = 4.5V Typ. ––– VDS = VGS, ID = 100μA RG = 1.8Ω VDS = 15V, ID = 19A VDS = 24V, VGS = 0V, TJ = 125°C μA nA TJ = 25°C, IF = 19A, VDD = 15V di/dt = 230A/μs e TJ = 25°C, IS = 19A, VGS = 0V e showing the integral reverse p-n junction diode. TJ = 25°C, IS = 2.2A, VGS = 0V e MOSFET symbol VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 19A VDS = 15V VGS = 20V VGS = -20V VDS = 24V, VGS = 0V Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1mA VGS = 10V, ID = 24A e Conditions See Fig. 15a & 15b Max. 230 19 ƒ = 1.0MHz |
Ähnliche Teilenummer - IRF8788PBF_15 |
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Ähnliche Beschreibung - IRF8788PBF_15 |
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