Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF8910PBF Datenblatt(PDF) 1 Page - International Rectifier |
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IRF8910PBF Datenblatt(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 07/09/08 IRF8910PbF HEXFET® Power MOSFET Notes through
are on page 10 SO-8 Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating D1 D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box l Lead-Free VDSS RDS(on) max ID 20V 13.4m:@VGS = 10V 10A Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation W PD @TA = 70°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 42 °C/W RθJA Junction-to-Ambient fg ––– 62.5 Max. 10 8.3 82 ± 20 20 -55 to + 150 2.0 0.016 1.3 PD -95673A |
Ähnliche Teilenummer - IRF8910PBF_15 |
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Ähnliche Beschreibung - IRF8910PBF_15 |
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