KDR505S_15 datasheet(1/2 Pages) KEC

Teilenummer	KDR505S

Bauteilbeschribung	SCHOTTKY BARRIER TYPE DIODE

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Hersteller	KEC [KEC(Korea Electronics)]

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2003. 2. 25

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SEMICONDUCTOR

TECHNICAL DATA

KDR505S

SCHOTTKY BARRIER TYPE DIODE

Revision No : 1

High frequency rectification

(Switching regulators, converters, choppers)

FEATURES

・Low Forward Voltage : V

F max=0.55V.

・Low Leakage Current : I

R max=20μ

A.

MAXIMUM RATING (Ta=25

℃)

DIM

MILLIMETERS

SOT-23

A

B

C

D

E

2.93 0.20

1.30+0.20/-0.15

0.40+0.15/-0.05

2.40+0.30/-0.20

G

1.90

H

J

K

L

M

N

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

Q

0.1 MAX

0.20 MIN

1.00+0.20/-0.10

M

E

1

2

3

B

1.30 MAX

LL

PP

P7

+

_

Q

1. NC

2. ANODE

3. CATHODE

2

1

3

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

Type Name

Marking

Lot No.

DM

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Reverse Voltage

VR

IR=200μ

A

50

-

V

Forward Voltage

VF

IF=0.5A

-

0.55

V

Reverse Current

IR

VR=25V

-

20

μA

Total Capacitance

CT

VR=10V, f=1MHz

-

22

-

pF

CHARACTERISTIC

SYMBOL

RATING

UNIT

Repetitive Peak Reverse Voltage

VRRM

50

V

Reverse Voltage

VR

50

V

Average Forward Current

IO

0.5

A

Non-repetitive Peak Surge Current

IFSM

5

A

Junction Temperature

Tj

125

℃

Storage Temperature

Tstg

-55

～125

℃

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