KDS120_15 datasheet(1/2 Pages) KEC

Teilenummer	KDS120

Bauteilbeschribung	SILICON EPITAXIAL TYPE DIODE

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Hersteller	KEC [KEC(Korea Electronics)]

Direct Link	http://www.keccorp.com

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2008.9. 8

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SEMICONDUCTOR

TECHNICAL DATA

KDS120

SILICON EPITAXIAL TYPE DIODE

Revision No : 4

ULTRA HIGH SPEED SWITCHING APPLICATION.

FEATURES

・Small Package

: USM.

・Low Forward Voltage

: VF=0.92V (Typ.).

・Fast Reverse Recovery Time : t

rr=1.6ns(Typ.).

・Small Total Capacitance

: CT=2.2pF (Typ.).

MAXIMUM RATING (Ta=25

℃)

DIM

MILLIMETERS

A

B

D

E

USM

2.00 0.20

1.25 0.15

0.90 0.10

0.3+0.10/-0.05

2.10

0.20

0.65

0.15+0.1/-0.06

1.30

0.00~0.10

0.70

C

G

H

J

K

L

K

1

3

2

E

B

D

H

MM

N

M

0.42 0.10

N

0.10 MIN

P0.1 MAX

+

_

+

_

+

_

+

_

+

_

P

1. CATHODE 1

2. CATHODE 2

3. ANODE

3

2

1

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

A3

Type Name

Marking

Lot No.

CHARACTERISTIC

SYMBOL

RATING

UNIT

Maximum (Peak) Reverse Voltage

VRM

85

V

Reverse Voltage

VR

80

V

Maximum (Peak) Forward Current

IFM

300 *

mA

Average Forward Current

IO

100 *

mA

Surge Current (10ms)

IFSM

2 *

A

Power Dissipation

PD

100

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Forward Voltage

VF(1)

IF=1mA

-

0.61

-

V

VF(2)

IF=10mA

-

0.74

-

VF(3)

IF=100mA

-

0.92

1.20

Reverse Current

IR

VR=80V

-

0.5

μA

Total Capacitance

CT

VR=0, f=1MHz

-

2.2

4.0

pF

Reverse Recovery Time

trr

IF=10mA

-

1.6

4.0

nS

Note : * Unit Rating. Total Rating=Unit Rating x 1.5

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