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SEMICONDUCTOR

TECHNICAL DATA

SILICON EPITAXIAL PLANAR DIODE

2005. 6. 21

KDS165T

Revision No : 0

ULTRA HIGH SPEED SWITCHING APPLICATION.

FEATURES

・Low Forward Voltage.

・Fast Reverse Recovery Time.

・Small Total Capacitance.

MAXIMUM RATING (Ta=25

℃)

DIM

MILLIMETERS

A

B

D

D1

D2

E

TSQ

2.9 0.2

1.6+0.2/-0.1

0.70 0.05

0.4 0.1

2.8+0.2/-0.3

1.9 0.2

0.16 0.05

0.00-0.10

0.25+0.3/-0.15

C

F

G

H

I

J

K

0.60

B

E

H

2

14

3

+

_

+

_

+

_

+

_

+

_

+ 0.1

_

0.55 + 0.1

_

G

12

43

ELECTRICAL CHARACTERISTICS (Ta=25

℃)

G 3

1

2

4

3

Type Name

Marking

Lot No.

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Forward Voltage

-

0.60

-

V

-

0.72

-

-

0.90

1.20

Reverse Current

-

-

0.5

μA

Total Capacitance

-

0.9

3.0

pF

Reverse Recovery Time

-

1.6

4.0

nS

CHARACTERISTIC

SYMBOL

RATING

UNIT

Maximum (Peak) Reverse Voltage

85

V

Reverse Voltage

80

V

Maximum (Peak) Forward Current

300

mA

Average Forward Current

100

mA

Surge Current (10ms)

2A

Power Dissipation

900

mW

Junction Temperature

150

℃

Storage Temperature Range

-55

～150

℃

* : Unit Rating. (Total Rating=Unit Rating

×1.5)

** : Total rating, Package mounted on a ceramic board (600

㎟×0.8㎜)