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BCW31 Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer BCW31
Bauteilbeschribung  NPN general purpose transistors
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BCW31 Datenblatt(HTML) 2 Page - NXP Semiconductors

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2004 Feb 06
2
NXP Semiconductors
Product data sheet
NPN general purpose transistors
BCW31; BCW32;
BCW33
FEATURES
• Low current (100 mA)
• Low voltage (32 V).
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
NPN transistors in a plastic SOT23 package.
PNP complements: BCW29 and BCW30.
MARKING
Note
1.
* = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W : Made in China.
PINNING
TYPE NUMBER
MARKING CODE(1)
BCW31
D1*
BCW32
D2*
BCW33
D3*
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
2
1
3
MAM255
Top view
2
3
1
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BCW31
plastic surface mounted package; 3 leads
SOT23
BCW32
BCW33
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
32
V
VCEO
collector-emitter voltage
open base; IC = 2 mA
32
V
VEBO
emitter-base voltage
open collector
5
V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C
250
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
−65
+150
°C


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