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BCW31 Datenblatt(PDF) 2 Page - NXP Semiconductors |
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BCW31 Datenblatt(HTML) 2 Page - NXP Semiconductors |
2 / 6 page 2004 Feb 06 2 NXP Semiconductors Product data sheet NPN general purpose transistors BCW31; BCW32; BCW33 FEATURES • Low current (100 mA) • Low voltage (32 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistors in a plastic SOT23 package. PNP complements: BCW29 and BCW30. MARKING Note 1. * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. PINNING TYPE NUMBER MARKING CODE(1) BCW31 D1* BCW32 D2* BCW33 D3* PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 Simplified outline (SOT23) and symbol. handbook, halfpage 2 1 3 MAM255 Top view 2 3 1 ORDERING INFORMATION LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION BCW31 − plastic surface mounted package; 3 leads SOT23 BCW32 BCW33 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 32 V VCEO collector-emitter voltage open base; IC = 2 mA − 32 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation Tamb ≤ 25 °C − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
Ähnliche Teilenummer - BCW31_15 |
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Ähnliche Beschreibung - BCW31_15 |
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