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2SC5415A Datenblatt(PDF) 2 Page - ON Semiconductor

Teilenummer 2SC5415A
Bauteilbeschribung  RF Transistor 12V, 100mA, fT=6.7GHz, NPN Single PCP
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

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2SC5415A
No. A1080-2/8
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Collector Cutoff Current
ICBO
VCB=10V, IE=0A
1.0
μA
Emitter Cutoff Current
IEBO
VEB=1V, IC=0A
10
μA
DC Current Gain
hFE1VCE=5V, IC=30mA
90*
270*
hFE2VCE=5V, IC=70mA
70
Gain-Bandwidth Product
fT
VCE=5V, IC=30mA
5
6.7
GHz
Output Capacitance
Cob
VCB=5V, f=1MHz
1.2
1.8
pF
Reverse Transfer Capacitance
Cre
0.65
pF
Forward Transfer Gain
⏐S21e⏐
2
VCE=5V, IC=30mA, f=1GHz
7.5
9
dB
Noise Figure
NF
VCE=5V, IC=7mA, f=1GHz
1.1
2.0
dB
* : The 2SC5415A is classified by 30mA hFE as follows :
Rank
E
F
hFE
90 to 180
135 to 270
Ordering Information
Device
Package
Shipping
memo
2SC5415AE-TD-E
PCP
1,000pcs./reel
Pb Free
2SC5415AF-TD-E
PCP
1,000pcs./reel
IC -- VCE
IC -- VBE
Collector-to-Emitter Voltage, VCE -- V
Base-to-Emitter Voltage, VBE -- V
40
30
20
10
50
0
0246
8
10
0
0.2
0.4
0.6
0.8
1.0
1.2
80
60
40
20
100
0
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0.05mA
IB=0mA
IT13392
IT13393
0.35mA


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