Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC5415A Datenblatt(PDF) 2 Page - ON Semiconductor |
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2SC5415A Datenblatt(HTML) 2 Page - ON Semiconductor |
2 / 8 page 2SC5415A No. A1080-2/8 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Collector Cutoff Current ICBO VCB=10V, IE=0A 1.0 μA Emitter Cutoff Current IEBO VEB=1V, IC=0A 10 μA DC Current Gain hFE1VCE=5V, IC=30mA 90* 270* hFE2VCE=5V, IC=70mA 70 Gain-Bandwidth Product fT VCE=5V, IC=30mA 5 6.7 GHz Output Capacitance Cob VCB=5V, f=1MHz 1.2 1.8 pF Reverse Transfer Capacitance Cre 0.65 pF Forward Transfer Gain ⏐S21e⏐ 2 VCE=5V, IC=30mA, f=1GHz 7.5 9 dB Noise Figure NF VCE=5V, IC=7mA, f=1GHz 1.1 2.0 dB * : The 2SC5415A is classified by 30mA hFE as follows : Rank E F hFE 90 to 180 135 to 270 Ordering Information Device Package Shipping memo 2SC5415AE-TD-E PCP 1,000pcs./reel Pb Free 2SC5415AF-TD-E PCP 1,000pcs./reel IC -- VCE IC -- VBE Collector-to-Emitter Voltage, VCE -- V Base-to-Emitter Voltage, VBE -- V 40 30 20 10 50 0 0246 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 80 60 40 20 100 0 0.30mA 0.25mA 0.20mA 0.15mA 0.10mA 0.05mA IB=0mA IT13392 IT13393 0.35mA |
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