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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFP3415PBF Datenblatt(PDF) 1 Page - International Rectifier |
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IRFP3415PBF Datenblatt(HTML) 1 Page - International Rectifier |
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1 / 9 page  IRFP3415PbF HEXFET® Power MOSFET S D G Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 43 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 30 A IDM Pulsed Drain Current 150 PD @TC = 25°C Power Dissipation 200 W Linear Derating Factor 1.3 W/ °C VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy 590 mJ IAR Avalanche Current 22 A EAR Repetitive Avalanche Energy 20 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m) Absolute Maximum Ratings Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.75 RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W RθJA Junction-to-Ambient ––– 40 Thermal Resistance VDSS = 150V RDS(on) = 0.042Ω ID = 43A l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description 07/15/04 Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial- industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. www.irf.com 1 TO-247AC PD - 95512 |
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