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IRFP4332PBF Datenblatt(PDF) 1 Page - International Rectifier

Teilenummer IRFP4332PBF
Bauteilbeschribung  Advanced Process Technology
Download  9 Pages
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFP4332PBF Datenblatt(HTML) 1 Page - International Rectifier

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www.irf.com
1
12/15/09
IRFP4332PbF
Notes
 through † are on page 9
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Features
l
Advanced Process Technology
l
Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l
Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l
Low QG for Fast Response
l
High Repetitive Peak Current Capability for
Reliable Operation
l
Short Fall & Rise Times for Fast Switching
l
175°C Operating Junction Temperature for
Improved Ruggedness
l
Repetitive Avalanche Capability for Robustness
and Reliability
PDP SWITCH
GD
S
Gate
Drain
Source
S
D
G
TO-247AC
S
D
G
D
VDS min
250
V
VDS (Avalanche) typ.
300
V
RDS(ON) typ. @ 10V
29
m
:
TJ max
175
°C
Key Parameters
Absolute Maximum Ratings
Parameter
Units
VGS
Gate-to-Source Voltage
V
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current c
IRP @ TC = 100°C
Repetitive Peak Current
gh
PD @TC = 25°C
Power Dissipation
W
PD @TC = 100°C
Power Dissipation
Linear Derating Factor
W/°C
TJ
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
N
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case f
–––
0.42
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient
f
–––
40
Max.
40
230
57
±30
120
300
-40 to + 175
10lbxin (1.1Nxm)
360
180
2.4
PD - 97100B


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