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IRFPS3815PBF Datenblatt(PDF) 1 Page - International Rectifier

Teilenummer IRFPS3815PBF
Bauteilbeschribung  Advanced Process Technology
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFPS3815PBF Datenblatt(HTML) 1 Page - International Rectifier

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IRFPS3815PbF
HEXFET® Power MOSFET
The HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in
a wide variety of applications.
S
D
G
VDSS = 150V
RDS(on) = 0.015Ω
ID = 105A
Description
09/13/04
www.irf.com
1
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Super-247™
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
105
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
74
A
IDM
Pulsed Drain Current

390
PD @TC = 25°C
Power Dissipation
441
W
Linear Derating Factor
2.9
W/°C
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy
‚
1610
mJ
IAR
Avalanche Current

58
A
EAR
Repetitive Avalanche Energy

38
mJ
dv/dt
Peak Diode Recovery dv/dt
ƒ
3.0
V/ns
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Absolute Maximum Ratings
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
0.34
RθCS
Case-to-Sink, Flat, Greased Surface
0.24
–––
°C/W
RθJA
Junction-to-Ambient
–––
40
Thermal Resistance
PD - 95896


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