BAP50-03_4

© NXP B.V. 2009. All rights reserved.

Product data sheet

Rev. 04 — 11 September 2009

2 of 7

NXP Semiconductors

BAP50-03

General purpose PIN diode

4.

Limiting values

5.

Thermal characteristics

6.

Characteristics

[1]

Guaranteed on AQL basis: inspection level S4, AQL 1.0.

Table 3.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Per diode

reverse voltage

-

50

V

forward current

-

50

mA

total power dissipation

-

500

mW

storage temperature

−65

+150

°C

junction temperature

−65

+150

°C

Table 4.

Thermal characteristics

Symbol

Parameter

Conditions

Typ

Unit

thermal resistance from junction

to soldering point

85

K/W

Table 5.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

forward voltage

-

0.95

1.1

V

reverse voltage

50

--V

reverse current

-

-

100

nA

diode capacitance

f = 1 MHz; see Figure 1

-

0.4

-

pF

-

0.3

0.55

pF

-

0.2

0.35

pF

diode forward resistance

f = 100 MHz; see Figure 2

[1]

-25

40

Ω

[1]

-14

25

Ω

[1]

-3

5

Ω