Datenblatt-Suchmaschine für elektronische Bauteile |
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BAP50-04 Datenblatt(PDF) 3 Page - NXP Semiconductors |
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BAP50-04 Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 1999 Dec 03 3 NXP Semiconductors Product specification General purpose PIN diode BAP50-04 ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per diode VF forward voltage IF =50mA 0.95 1.1 V VR reverse voltage IR =10 A50 V IR reverse current VR =50V 100 nA Cd diode capacitance VR =0; f =1 MHz 0.45 pF VR =1 V; f = 1MHz 0.35 0.6 pF VR =5 V; f = 1MHz 0.3 0.5 pF rD diode forward resistance IF = 0.5 mA; f = 100 MHz; note 1 25 40 IF = 1 mA; f = 100 MHz; note 1 14 25 IF =10mA; f=100MHz; note 1 35 L charge carrier life time when switched from IF 10 mA to IR 6mA; RL 100 ; measured at IR 3mA 1.05 s LS series inductance 1.4 nH SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering point 220 K/W |
Ähnliche Teilenummer - BAP50-04_15 |
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Ähnliche Beschreibung - BAP50-04_15 |
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