Datenblatt-Suchmaschine für elektronische Bauteile |
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BAP51-04W_N Datenblatt(PDF) 2 Page - NXP Semiconductors |
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BAP51-04W_N Datenblatt(HTML) 2 Page - NXP Semiconductors |
2 / 7 page 2002 Feb 19 2 Philips Semiconductors Preliminary specification General purpose PIN diode BAP51-04W FEATURES • Two elements in series configuration in a small SMD plastic package • Low diode capacitance • Low diode forward resistance. APPLICATIONS • General RF applications. DESCRIPTION Two planar PIN diodes in series configuration in a SOT323 small SMD plastic package. PINNING PIN DESCRIPTION 1 anode 2 cathode 3 common connection handbook, halfpage 12 3 MAM391 2 1 3 Top view Marking code: W6- Fig.1 Simplified outline (SOT323) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VR continuous reverse voltage − 50 V IF continuous forward current − 50 mA Ptot total power dissipation Ts = 90 °C − 240 mW Tstg storage temperature −65 +150 °C Tj junction temperature −65 +150 °C |
Ähnliche Teilenummer - BAP51-04W_N_15 |
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Ähnliche Beschreibung - BAP51-04W_N_15 |
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