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BAP51-04W_N Datenblatt(PDF) 2 Page - NXP Semiconductors

Teilenummer BAP51-04W_N
Bauteilbeschribung  General purpose PIN diode
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BAP51-04W_N Datenblatt(HTML) 2 Page - NXP Semiconductors

  BAP51-04W_N_15 Datasheet HTML 1Page - NXP Semiconductors BAP51-04W_N_15 Datasheet HTML 2Page - NXP Semiconductors BAP51-04W_N_15 Datasheet HTML 3Page - NXP Semiconductors BAP51-04W_N_15 Datasheet HTML 4Page - NXP Semiconductors BAP51-04W_N_15 Datasheet HTML 5Page - NXP Semiconductors BAP51-04W_N_15 Datasheet HTML 6Page - NXP Semiconductors BAP51-04W_N_15 Datasheet HTML 7Page - NXP Semiconductors  
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2002 Feb 19
2
Philips Semiconductors
Preliminary specification
General purpose PIN diode
BAP51-04W
FEATURES
• Two elements in series configuration in a small SMD
plastic package
• Low diode capacitance
• Low diode forward resistance.
APPLICATIONS
• General RF applications.
DESCRIPTION
Two planar PIN diodes in series configuration in a SOT323
small SMD plastic package.
PINNING
PIN
DESCRIPTION
1
anode
2
cathode
3
common connection
handbook, halfpage
12
3
MAM391
2
1
3
Top view
Marking code: W6-
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
50
V
IF
continuous forward current
50
mA
Ptot
total power dissipation
Ts
= 90 °C
240
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−65
+150
°C


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