1PS66SB82_1PS88SB82_15 datasheet(4/10 Pages) PHILIPS

Teilenummer	1PS66SB82_1PS88SB82

Bauteilbeschribung	15 V, 30 mA low Cd Schottky barrier diodes

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4 / 10 page

1PS66SB82_1PS88SB82_4

Product data sheet

Rev. 04 — 13 January 2010

4 of 10

NXP Semiconductors

1PS66SB82; 1PS88SB82

15 V, 30 mA low Cd Schottky barrier diodes

(1) Tamb = 125 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

(1) Tamb = 125 °C

(2) Tamb = 85 °C

(3) Tamb = 25 °C

Fig 1.

Forward current as a function of forward

voltage; typical values

Fig 2.

Reverse current as a function of reverse

voltage; typical values

f = 1 kHz; Tamb = 25 °Cf = 1 MHz; Tamb = 25 °C

Fig 3.

Differential diode forward resistance as a

function of forward current; typical values

Fig 4.

Diode capacitance as a function of reverse

voltage; typical values

1.6

0

(3)

0.4

0.8

1.2

VF (V)

IF

(mA)

103

102

10

1

mld549

(1)

(2)

(1)

(2)

(3)

15

10

VR (V)

IR

(

μA)

5

0

(3)

mld550

103

102

10

1

10−1

10−2

(1)

(2)

103

10

102

1

mgt838

10−1

1

rdif

(

Ω)

10

IF (mA)

102

010

1.2

0

0.4

0.6

0.8

1

2

Cd

(pF)

VR (V)

46

8

mld551

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