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BAS116 Datenblatt(PDF) 4 Page - NXP Semiconductors |
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BAS116 Datenblatt(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 2003 Dec 12 4 NXP Semiconductors Product data sheet Low-leakage diode BAS116 GRAPHICAL DATA handbook, halfpage 0 200 300 0 100 200 MLB755 100 T ( C) amb o I F (mA) Device mounted on an FR4 printed-circuit board. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. handbook, halfpage 0 1.6 300 0 100 200 MLB752 - 1 0.8 1.2 0.4 I F (mA) V (V) F (1) (2) (3) (1) Tj = 150 °C; typical values. (2) Tj = 25 °C; typical values. (3) Tj = 25 °C; maximum values. handbook, full pagewidth MBG704 10 tp (µs) 1 IFSM (A) 102 10−1 104 102 103 10 1 Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. Based on square wave currents; Tj = 25 °C prior to surge. |
Ähnliche Teilenummer - BAS116_15 |
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Ähnliche Beschreibung - BAS116_15 |
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