IRL3803VSPbF

IRL3803VLPbF

1/4/05

Parameter

Typ.

Max.

Units

Junction-to-Case

–––

0.75

Junction-to-Ambient (PCB Mounted, steady state)

‰

–––

40

Thermal Resistance

www.irf.com

1

‡

S

D

G

utilize advanced processing techniques to achieve extremely low on-

resistance per silicon area. This benefit, combined with the fast

switching speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of applications.

die sizes up to HEX-4. It provides the highest power capability and the lowest

is suitable for high current applications because of its low internal connection

resistance and can dissipate up to 2.0W in a typical surface mount

application.

Description

Absolute Maximum Ratings

Parameter

Max.

Units

ˆ

140

‡

ˆ

110

A

Pulsed Drain Current

ˆ

470

Power Dissipation

3.8

W

Power Dissipation

200

W

Linear Derating Factor

1.4

W/°C

Gate-to-Source Voltage

± 16

V

Avalanche Current



71

A

Repetitive Avalanche Energy



20

mJ

dv/dt

Peak Diode Recovery dv/dt

ƒˆ

5.0

V/ns

Operating Junction and

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

300 (1.6mm from case )

IRL3803VS

TO-262

IRL3803VL

°C/W

PD - 95449