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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRL6283MPBF Datenblatt(PDF) 2 Page - International Rectifier |
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IRL6283MPBF Datenblatt(HTML) 2 Page - International Rectifier |
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2 / 9 page  2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 24, 2014 IRL6283MTRPbF D S G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ΔBVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 4.8 ––– mV/°C Reference to 25°C, ID = 1.0mA RDS(on) Static Drain-to-Source On-Resistance ––– 0.65 0.87 m Ω VGS = 4.5V, ID = 50A ––– 1.1 1.5 VGS = 2.5V, ID = 50A VGS(th) Gate Threshold Voltage 0.5 0.8 1.1 V VDS = VGS, ID = 100µA ΔVGS(th) Gate Threshold Voltage Coefficient ––– -3.9 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA VDS = 16V, VGS = 0V ––– ––– 150 VDS = 16V, VGS = 0V, TJ=125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V gfs Forward Transconductance 320 ––– ––– S VDS = 10V, ID = 30A Qg Total Gate Charge ––– 105 158 Qgs1 Pre-VthGate-to-Source Charge ––– 9.7 ––– VDS = 10V Qgd Gate-to-Drain Charge ––– 35 ––– ID = 30A Qoss Output Charge ––– 50 ––– nC VDS = 16V, VGS = 0V RG Gate Resistance ––– 1.1 ––– Ω td(on) Turn-On Delay Time ––– 23 ––– VDD = 20V, VGS = 4.5V tr Rise Time ––– 160 ––– ns ID = 30A td(off) Turn-Off Delay Time ––– 116 ––– RG = 1.8 Ω tf Fall Time ––– 192 ––– Ciss Input Capacitance ––– 8292 ––– VGS = 0V Coss Output Capacitance ––– 2012 ––– pF VDS = 10V Crss Reverse Transfer Capacitance ––– 1526 ––– ƒ = 1.0MHz Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 211 A MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current ––– ––– 305 integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 30A, VGS = 0V trr Reverse Recovery Time ––– 48 72 ns TJ = 25°C, IF = 30A,VDD = 10V Qrr Reverse Recovery Charge ––– 84 126 nC di/dt = 200A/µs Qgs2 Post-Vth Gate-to-Source Charge ––– 8.9 ––– nC VGS = 4.5V Qodr Gate Charge Overdrive ––– 51 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 44 ––– ––– 0.50 0.75 VGS = 10V, ID = 50A Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400µs; duty cycle ≤ 2%. |
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