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IRLB3036PBF Datenblatt(PDF) 1 Page - International Rectifier

Teilenummer IRLB3036PBF
Bauteilbeschribung  High Efficiency Synchronous Rectification in SMPS
Download  8 Pages
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRLB3036PBF Datenblatt(HTML) 1 Page - International Rectifier

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12/08/08
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1
HEXFET® Power MOSFET
S
D
G
PD - 97357
IRLB3036PbF
GD
S
Gate
Drain
Source
Applications
l DC Motor Drive
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Optimized for Logic Level Drive
l Very Low RDS(ON) at 4.5V VGS
l Superior R*Q at 4.5V VGS
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
TO-220AB
IRLB3036PbF
VDSS
60V
RDS(on) typ.
1.9m
max.
2.4m
ID (Silicon Limited)
270Ac
ID (Package Limited)
195A
Absolute Maximum Ratings
Symbol
Parameter
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Package Limited)
IDM
Pulsed Drain Current
d
PD @TC = 25°C
Maximum Power Dissipation
W
Linear Derating Factor
W/°C
VGS
Gate-to-Source Voltage
V
dv/dt
Peak Diode Recovery
f
V/ns
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
e
mJ
IAR
Avalanche Current
d
A
EAR
Repetitive Avalanche Energy
g
mJ
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
k
–––
0.40
RθCS
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient (PCB Mount)
jk
–––
62
See Fig. 14, 15, 22a, 22b
A
°C
°C/W
290
380
8.0
±16
2.5
10lb
xin (1.1Nxm)
-55 to + 175
300
Max.
270
c
190
c
1100
195


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