Datenblatt-Suchmaschine für elektronische Bauteile |
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2N3055 Datenblatt(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2N3055 Datenblatt(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 4 page Product Specification www.jmnic.com 2 Silicon NPN Power Transistors 2N3055 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;IB=0 60 V VCER Collector-emitter sustaining voltage IC=0.2A ;RBE=100Ω 70 V VCEsat-1 Collector-emitter saturation voltage IC=4A ;IB=0.4A 1.1 V VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=3.3A 3.0 V VBE Base-emitter on voltage IC=4A ; VCE=4V 1.5 V ICEO Collector cut-off current VCE=30V; IB=0 0.7 mA ICEX Collector cut-off current VCE=100V; VBE(off)=1.5V TC=150℃ 1.0 5.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 5.0 mA hFE-1 DC current gain IC=4A ; VCE=4V 20 70 hFE-2 DC current gain IC=10A ; VCE=4V 5.0 Is/b Second breakdown collector current With base forward biased VCE=40Vdc,t=1.0s, Nonrepetitive 2.87 A fT Transition frequency IC=0.5A ; VCE=10V 2.5 MHz |
Ähnliche Teilenummer - 2N3055_15 |
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Ähnliche Beschreibung - 2N3055_15 |
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