Datenblatt-Suchmaschine für elektronische Bauteile |
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2N5972 Datenblatt(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2N5972 Datenblatt(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
1 / 3 page Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5972 DESCRIPTION ・With TO-3 package ・Low-collector emitter saturation voltage APPLICATIONS ・Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 80 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 15 A ICM Collector current-peak 30 A IB Base current 5 A PD Total Power Dissipation TC=25℃ 150 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 1.1 ℃/W JMnic |
Ähnliche Teilenummer - 2N5972_15 |
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Ähnliche Beschreibung - 2N5972_15 |
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