Absolute Maximum Ratings

Parameter

Units

ID @ VGS = 0V, TC = 25°C

Continuous Drain Current

45*

ID @ VGS =0V, TC = 100°C

Continuous Drain Current

3 1

IDM

Pulsed Drain Current ➀

220

PD @ TC = 25°C

Max. Power Dissipation

15 0

W

Linear Derating Factor

1.2

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy ➁

480

mJ

IAR

Avalanche Current ➀

-A

EAR

Repetitive Avalanche Energy ➀

-mJ

dv/dt

Peak Diode Recovery dv/dt ➂

4.5

V/ns

T J

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Lead Temperature

300 (0.063 in. (1.6mm) from case for 10s)

Weight

11.5(typical)

g

PD - 90640

Rectifier’s advanced line of power MOSFET transistors.

The efficient geometry and unique processing of this latest

“State of the Art” design achieves: very low on-state resis-

tance combined with high transconductance; superior re-

verse energy and diode recovery dv/dt capability.

The HEXFET transistors also feature all of the well estab-

lished advantages of MOSFETs such as voltage control,

very fast switching, ease of paralleling and temperature

stability of the electrical parameters.

They are well suited for applications such as switching

power supplies, motor controls, inverters, choppers, audio

amplifiers and high energy pulse circuits.

A

REPETITIVE AVALANCHE AND dv/dt RATED

IRF054

HEXFET



TRANSISTORS

THRU-HOLE (TO-204AA/AE)

01/24/01

www.irf.com

1

60V, N-CHANNEL

* Current limited by pin diameter.

TO-3

Product Summary

IRF054

60V

0.022

Ω

45A*

Features:

For footnotes refer to the last page