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74LVC1G18 Datenblatt(PDF) 6 Page - NXP Semiconductors |
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74LVC1G18 Datenblatt(HTML) 6 Page - NXP Semiconductors |
6 / 13 page 74LVC1G18_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 30 August 2007 6 of 13 NXP Semiconductors 74LVC1G18 1-of-2 non-inverting demultiplexer with 3-state deselected output 11. Dynamic characteristics [1] Typical values are measured at Tamb =25 °C and VCC = 1.8 V, 2.5 V, 2.7 V, 3.3 V and 5.0 V respectively. [2] tpd is the same as tPLH and tPHL [3] ten is the same as tPZH and tPZL [4] tdis is the same as tPLZ and tPHZ [5] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ ∑(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; ∑(C L × VCC 2 × f o) = sum of outputs. Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 5. Symbol Parameter Conditions −40 °C to +85 °C −40 °C to +125 °C Unit Min Typ[1] Max Min Max tpd propagation delay A to nY; see Figure 3 [2] VCC = 1.65 V to 1.95 V 1.0 5.1 10.0 1.0 12.5 ns VCC = 2.3 V to 2.7 V 1.0 3.2 5.5 0.5 6.9 ns VCC = 2.7 V 1.0 3.2 5.4 0.5 6.8 ns VCC = 3.0 V to 3.6 V 1.0 3.0 5.0 0.5 6.3 ns VCC = 4.5 V to 5.5 V 1.0 2.3 3.8 0.5 4.8 ns ten enable time S to nY; see Figure 3 [3] VCC = 1.65 V to 1.95 V 1.0 5.8 11.0 1.0 13.8 ns VCC = 2.3 V to 2.7 V 1.0 3.6 6.2 0.5 7.8 ns VCC = 2.7 V 1.0 3.6 6.0 0.5 7.5 ns VCC = 3.0 V to 3.6 V 1.0 3.1 5.2 0.5 6.5 ns VCC = 4.5 V to 5.5 V 1.0 2.4 3.6 0.5 4.5 ns tdis disable time S to nY; see Figure 3 [4] VCC = 1.65 V to 1.95 V 1.0 4.8 9.0 1.0 11.3 ns VCC = 2.3 V to 2.7 V 1.0 2.7 5.3 0.5 6.6 ns VCC = 2.7 V 1.0 3.5 5.2 0.5 6.5 ns VCC = 3.0 V to 3.6 V 1.0 3.3 4.9 0.5 6.1 ns VCC = 4.5 V to 5.5 V 0.5 2.2 3.3 0.5 4.1 ns CPD power dissipation capacitance VI = GND to VCC; VCC = 3.3 V [5] - 28.8 - - - pF |
Ähnliche Teilenummer - 74LVC1G18_15 |
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Ähnliche Beschreibung - 74LVC1G18_15 |
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