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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF6674PBF Datenblatt(PDF) 1 Page - International Rectifier |
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IRF6674PBF Datenblatt(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 4/24/08 DirectFET Power MOSFET PD - 97133 Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) Fig 1. Typical On-Resistance vs. Gate Voltage Typical values (unless otherwise specified) Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state. TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.272mH, RG = 25Ω, IAS = 13.4A. Notes: Fig 2. Typical Total Gate Charge vs. Gate-to-Source Voltage IRF6674TRPbF l RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques SH SJ SP MZ MN Description The IRF6674PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an Micro8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6674PbF is optimized for primary side sockets in forward and push-pull isolated DC-DC topologies, for 48V and 36V-60V input voltage range systems. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance isolated DC- DC converters. DirectFET ISOMETRIC MZ 4 6 8 10 12 14 16 VGS, Gate-to-Source Voltage (V) 0 10 20 30 40 50 TJ = 25°C TJ = 125°C ID = 13.4A VDSS VGS RDS(on) 60V max ±20V max 9.0m Ω@ 10V Qg tot Qgd Vgs(th) 24nC 8.3nC 4.0V 010 20 30 QG Total Gate Charge (nC) 0 2 4 6 8 10 12 14 VDS= 48V VDS= 30V ID= 13.4A Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V e ID @ TA = 70°C Continuous Drain Current, VGS @ 10V e A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V f IDM Pulsed Drain Current g EAS Single Pulse Avalanche Energy h mJ IAS Avalanche Current Ãh A 98 Max. 10.7 67 134 ±20 60 13.4 13.4 |
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