 |
Datenblatt-Suchmaschine für elektronische Bauteile |
|
|
Datenblatt-Suchmaschine für elektronische Bauteile |
|
IRF7739L1PBF Datenblatt(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRF7739L1PBF Datenblatt(HTML) 2 Page - International Rectifier |
|
|
2 / 10 page  2 www.irf.com © 2012 International Rectifier February 13 ,2013 IRF7739L1TRPbF Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400μs; duty cycle ≤ 2%. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 40 ––– ––– V ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.008 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 0.70 1.0 mΩ VGS(th) Gate Threshold Voltage 2.0 2.8 4.0 V ΔVGS(th)/ΔTJ Gate Threshold Voltage Coefficient ––– -6.7 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 20 μA ––– ––– 250 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 280 ––– ––– S Qg Total Gate Charge ––– 220 330 Qgs1 Pre-Vth Gate-to-Source Charge ––– 46 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 19 ––– nC Qgd Gate-to-Drain Charge ––– 81 120 Qgodr Gate Charge Overdrive ––– 74 ––– See Fig. 9 Qsw Switch Charge (Qgs2 + Qgd) ––– 100 ––– Qoss Output Charge ––– 83 ––– nC RG Gate Resistance ––– 1.5 ––– Ω td(on) Turn-On Delay Time ––– 21 ––– tr Rise Time –––71––– td(off) Turn-Off Delay Time ––– 56 ––– ns tf Fall Time ––– 42 ––– Ciss Input Capacitance ––– 11880 ––– Coss Output Capacitance ––– 2510 ––– pF Crss Reverse Transfer Capacitance ––– 1240 ––– Coss Output Capacitance ––– 8610 ––– Coss Output Capacitance ––– 2230 ––– Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 110 (Body Diode) A ISM Pulsed Source Current ––– ––– 1070 (Body Diode) Ãg VSD Diode Forward Voltage ––– ––– 1.3 V trr Reverse Recovery Time ––– 87 130 ns Qrr Reverse Recovery Charge ––– 250 380 nC MOSFET symbol RG=1.8Ω VDS = 25V Conditions VGS = 0V, VDS = 32V, f=1.0MHz VGS = 0V, VDS = 1.0V, f=1.0MHz VDS = 16V, VGS = 0V VDD = 20V, VGS = 10VÃi VGS = 0V ƒ = 1.0MHz ID = 160A VDS = VGS, ID = 250μA VDS = 40V, VGS = 0V Conditions VGS = 0V, ID = 250μA Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 160A i TJ = 25°C, IF = 160A, VDD = 20V di/dt = 100A/μs i TJ = 25°C, IS = 160A, VGS = 0V i showing the integral reverse p-n junction diode. ID = 160A VDS = 32V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 10V VDS = 10V, ID = 160A VDS = 20V |
Ähnliche Teilenummer - IRF7739L1PBF |
|
Ähnliche Beschreibung - IRF7739L1PBF |
|
|
|
Link URL |
| Privatsphäre und Datenschutz |
| ALLDATASHEETDE.COM |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
German ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
