Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFB3077PBF Datenblatt(PDF) 1 Page - International Rectifier |
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IRFB3077PBF Datenblatt(HTML) 1 Page - International Rectifier |
1 / 8 page 5/2/11 Benefits l Worldwide Best RDS(on) in TO-220 l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability www.irf.com 1 IRFB3077PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits TO-220AB IRFB3077PbF D S D G S D G GD S Gate Drain Source VDSS 75V RDS(on) typ. 2.8m: max. 3.3m: ID (Silicon Limited) 210A c ID (Package Limited) 120A Absolute Maximum Ratings Symbol Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V dV/dt Peak Diode Recovery f V/ns TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e mJ IAR Avalanche Current d A EAR Repetitive Avalanche Energy g mJ Thermal Resistance Symbol Parameter Typ. Max. Units RθJC Junction-to-Case k ––– 0.402 RθCS Case-to-Sink, Flat Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient jk ––– 62 200 See Fig. 14, 15, 22a, 22b, 370 2.5 -55 to + 175 ± 20 2.5 10lb xin (1.1Nxm) 300 Max. 210 c 120 850 150 c PD - 97047B |
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