Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC2305 Datenblatt(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC2305 Datenblatt(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com JMnic Silicon NPN Power Transistors 2SC2305 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 400 V VCBO Collector-base breakdown voltage IC=1m A; IE=0 400 V VEBO Emitter-base breakdown voltage IE=1m A; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.8A ; VCE=5V 15 50 hFE-2 DC current gain IC=4A ; VCE=5V 8 |
Ähnliche Teilenummer - 2SC2305_15 |
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Ähnliche Beschreibung - 2SC2305_15 |
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