Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC2579 Datenblatt(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SC2579 Datenblatt(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page JMnic Product Specification 2 Silicon NPN Power Transistors 2SC2579 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 160 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=∞ 160 V V(BR)EBO Emitter-base breakdown voltage IE=5mA ; IC=0 6 V ICBO Collector cut-off current VCB=160V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=3A ; VCE=4V 50 VCE(sat) Collector-emitter saturation voltage IC=5A ; IB=0.5A 2.0 V fT Transition frequency IC=0.5A ; VCE=10V 20 MHz |
Ähnliche Teilenummer - 2SC2579_15 |
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Ähnliche Beschreibung - 2SC2579_15 |
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