Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFE9120 Datenblatt(PDF) 2 Page - International Rectifier |
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IRFE9120 Datenblatt(HTML) 2 Page - International Rectifier |
2 / 7 page IRFE9120 2 www.irf.com Thermal Resistance Parameter Min Typ Max Units Test Conditions R thJC Junction to Case — — 9.1 RthJ-PCB Junction to PC Board — — 26""" Soldered to a copper clad PC board °C/W Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions IS Continuous Source Current (Body Diode) — — -3.5 ISM Pulse Source Current (Body Diode) ➀ — — -14 VSD Diode Forward Voltage — — -4.8 V Tj = 25°C, IS = -3.5A, VGS = 0V ➃ trr Reverse Recovery Time — — 2 0 0 nS Tj = 25°C, IF =-3.5A, di/dt ≤ -100A/µs QRR Reverse Recovery Charge — — 3.1 µc VDD ≤ -50V ➃ t on Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. A For footnotes refer to the last page Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BVDSS Drain-to-Source Breakdown Voltage -100 — — V VGS = 0V, ID = -1.0mA ∆BVDSS/∆TJ Temperature Coefficient of Breakdown — -0.10 — V/°C Reference to 25°C, ID =-1.0mA Voltage RDS(on) Static Drain-to-Source On-State — — 0.60 VGS =-10V, ID = -2.2A➃ Resistance — — 0.69 VGS =-10V, ID =-3.5A ➃ VGS(th) Gate Threshold Voltage -2.0 — -4.0 V VDS = VGS, ID =250µA gfs Forward Transconductance 1.25 — — S ( ) VDS >-15V, IDS =-2.2A➃ IDSS Zero Gate Voltage Drain Current — — -25 VDS=-80V, VGS=0V — — -250 VDS =-80V VGS = 0V, TJ = 125°C IGSS Gate-to-Source Leakage Forward — — -100 VGS = -20V IGSS Gate-to-Source Leakage Reverse — — 1 0 0 VGS = 20V Qg Total Gate Charge — — 16.3 VGS =-10V, ID= -3.5A Qgs Gate-to-Source Charge — — 4.7 nC VDS =-50V Qgd Gate-to-Drain (‘Miller’) Charge — — 9.0 td(on) Turn-On Delay Time — — 6 0 VDD =- -50V, ID =-3.5A, t r Rise Time — — 1 00 RG =7.5Ω td(off) Turn-Off Delay Time — — 5 0 tf Fall Time — — 7 0 LS + LD Total Inductance — 6.1 — Ciss Input Capacitance — 3 8 0 VGS = 0V, VDS = -25V Coss Output Capacitance — 1 7 0 — pF f = 1.0MHz Crss Reverse Transfer Capacitance — 4 5 — nA nH ns µA Ω Measured from the center of drain pad to center of source pad |
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