Datenblatt-Suchmaschine für elektronische Bauteile |
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2SA1288 Datenblatt(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SA1288 Datenblatt(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page JMnic Product Specification 2 Silicon PNP Power Transistors 2SA1288 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA ,RBE=∞ -60 V V(BR)CBO Collector-base breakdown voltage IC=-1mA; IE=0 -80 V V(BR)EBO Emitter-base breakdown voltage IE=-1mA; IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-1.5A; IB=-75mA -0.4 V ICBO Collector cut-off current VCB=-40V; IE=0 -100 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -100 μA hFE DC current gain IC=-0.5A ; VCE=-2V 70 280 fT Transition frequency IC=-0.5A ; VCE=-5V 100 MHz hFE Classifications Q R S 70-140 100-200 140-280 |
Ähnliche Teilenummer - 2SA1288_15 |
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Ähnliche Beschreibung - 2SA1288_15 |
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