Datenblatt-Suchmaschine für elektronische Bauteile |
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MTBB0P10AJ3 Datenblatt(PDF) 4 Page - Cystech Electonics Corp. |
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MTBB0P10AJ3 Datenblatt(HTML) 4 Page - Cystech Electonics Corp. |
4 / 9 page CYStech Electronics Corp. Spec. No. : C163J3 Issued Date : 2015.05.29 Revised Date : Page No. : 4/9 MTBB0P10AJ3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 4 8 12 16 20 0 5 10 15 20 -VDS, Drain-Source Voltage(V) 10V 9V 8V -VGS=5V 5.5V 6V 6.5V 7V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1 1.2 1.4 -70 -20 30 80 130 180 Tj, Junction Temperature(°C) ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 0 200 400 600 800 1000 0.01 0.1 1 10 100 -ID, Drain Current(A) VGS=-10V VGS=-6V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 024 68 -IDR, Reverse Drain Current(A) Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 200 400 600 800 1000 1200 1400 1600 1800 2000 02 46 8 10 10 Tj=25°C Tj=150°C VGS=0V Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 2 -60 -20 20 60 100 140 180 Tj, Junction Temperature(°C) VGS=-10V, ID=-4.7A RDSON@Tj=25°C : 280mΩ typ. VGS=-6V, ID=-1A RDS(ON)@Tj=25°C : 298m8Ω typ -VGS, Gate-Source Voltage(V) ID=-4.7A |
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Ähnliche Beschreibung - MTBB0P10AJ3 |
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