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CSD18540Q5B Datenblatt(PDF) 6 Page - Texas Instruments

Teilenummer CSD18540Q5B
Bauteilbeschribung  CSD18540Q5B 60V N-Channel NexFET Power MOSFETs
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Hersteller  TI [Texas Instruments]
Direct Link  http://www.ti.com
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CSD18540Q5B Datenblatt(HTML) 6 Page - Texas Instruments

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0
20
40
60
80
100
120
−50
−25
0
25
50
75
100
125
150
175
TC - Case Temperature (ºC)
G001
0.1
1
10
100
1000
5000
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
10us
100us
1ms
10ms
DC
G001
10
100
0.01
0.1
1
TAV - Time in Avalanche (mS)
TC = 25ºC
TC = 125ºC
G001
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
−75
−25
25
75
125
175
TC - Case Temperature (ºC)
VGS = 4.5V
VGS = 10V
G001
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
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VSD − Source-to-Drain Voltage (V)
TC = 25°C
TC = 125°C
G001
CSD18540Q5B
SLPS488 – JUNE 2014
www.ti.com
Typical MOSFET Characteristics (continued)
(TA = 25°C unless otherwise stated)
ID = 28 A
Figure 8. Normalized On-State Resistance vs Temperature
Figure 9. Typical Diode Forward Voltage
Single Pulse, Max RθJC = 0.8°C/W
Figure 10. Maximum Safe Operating Area
Figure 11. Single Pulse Unclamped Inductive Switching
Figure 12. Maximum Drain Current vs Temperature
6
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Product Folder Links: CSD18540Q5B


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