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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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TSE2002GB2A1 Datenblatt(PDF) 5 Page - Integrated Device Technology |
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TSE2002GB2A1 Datenblatt(HTML) 5 Page - Integrated Device Technology |
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5 / 30 page  5 of 30 July 17, 2012 DC Characteristics Parameter Symbol Conditions Min. Max. Units Input Leakage Current ILI VIN = VSSSPD or VDDSPD ±1 A Output Leakage Current ILO VOUT = VSSSPD or VDDSPD, SDA in Hi-Z ±1 A Supply Current IDD VDDSPD = 3.3 V, fC = 100 kHz (rise/fall time < 30 ns) 700 A Standby Supply Current IDD1 VIN = VSSSPD or VDDSPD, VDDSPD = 3.6 V 40 A Input Low Voltage (SCL, SDA) VIL -0.5 0.3*VDDSPD V Input High Voltage (SCL, SDA) VIH 0.7* VDDSPD VDDSPD +1 V SA0 High Voltage VHV VHV - VDDSPD > 4.8 V 7 10 V Output Low Voltage VOL IOL = 2.1 mA, 3 V =< VDDSPD =< 3.6 V 0.4 V IOL = 0.7 mA, VDDSPD = 1.7 - 3.6 V 0.2 V Input hysteresis VHYST VDDSPD> 2.2V 0.05 *VDDSPD __ V |
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Ähnliche Beschreibung - TSE2002GB2A1 |
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