Datenblatt-Suchmaschine für elektronische Bauteile |
|
2SC3658 Datenblatt(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
|
2SC3658 Datenblatt(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page JMnic Product Specification 2 Silicon NPN Power Transistors 2SC3658 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=5A; IB=1.25A 2.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1.25A 1.5 V ICBO Collector cut-off current VCB=1200V; IE=0 0.5 mA IEBO Emitter cut-off current VEB=6V; IC=0 500 mA hFE DC current gain IC=1A ; VCE=5V 8 VECF Diode forward voltage IF=6A 2.0 V tf Fall time IC=5A ; IB1=1A;IB2=-2.5A;LB=0 0.5 μs |
Ähnliche Teilenummer - 2SC3658_15 |
|
Ähnliche Beschreibung - 2SC3658_15 |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |