Datenblatt-Suchmaschine für elektronische Bauteile |
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BF992 Datenblatt(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF992 Datenblatt(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
3 / 9 page NXP Semiconductors Product specification Silicon N-channel dual gate MOS-FET BF992 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Device mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 20 V ID drain current − 40 mA IG1 gate 1 current −±10 mA IG2 gate 2 current −±10 mA Ptot total power dissipation Tamb ≤ 60 °C; see Fig.2; note 1 − 200 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Fig.2 Power derating curves. handbook, halfpage 0 100 0 200 100 200 (mW) Ptot max MBL033 Tamb ( C) o Rev. 04 - 21 November 2007 3 of 9 |
Ähnliche Teilenummer - BF992_15 |
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Ähnliche Beschreibung - BF992_15 |
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